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	Feature Scale Simulation of PECVD of SiO_2 in SiH_4/N_2O Mixture
	Liu X(刘璇) ; Ge J(葛婕) ; Yang Y(杨轶) ; Song YX(宋亦旭) ; Ren TL(任天令) ; LIU Xuan ; GE Jie ; YANG Yi ; SONG Yixu ; REN Tianling
	2016-03-30 ; 2016-03-30
关键词	deposition plasma feature scale simulation O53
其他题名	Feature Scale Simulation of PECVD of SiO_2 in SiH_4/N_2O Mixture
中文摘要	In this paper,to simulate the process of PECVD(plasma enhanced chemical vapor deposition) of SiO2,the plasma chemistry and plasma density of SiH4/N2O mixture have been studied with an inductive coupled plasma model,and the level set methodology has been used to obtain the feature scale variation during the process.In this simulation,the goal is to fill a trench.We studied how ion sputtering and chamber pressure affect the feature scale model.After the simulation,we found that the trench will close up at the top after a few steps,and if we add the ion sputtering into the surface reactions,the trench top will close up a little later.When the chamber pressure is improved,the plasma density will increase,so the trench top will close up earlier.In semiconductor device manufacture,people can control the trench's feature scale through adjusting these two parameters.; In this paper,to simulate the process of PECVD(plasma enhanced chemical vapor deposition) of SiO2,the plasma chemistry and plasma density of SiH4/N2O mixture have been studied with an inductive coupled plasma model,and the level set methodology has been used to obtain the feature scale variation during the process.In this simulation,the goal is to fill a trench.We studied how ion sputtering and chamber pressure affect the feature scale model.After the simulation,we found that the trench will close up at the top after a few steps,and if we add the ion sputtering into the surface reactions,the trench top will close up a little later.When the chamber pressure is improved,the plasma density will increase,so the trench top will close up earlier.In semiconductor device manufacture,people can control the trench's feature scale through adjusting these two parameters.
语种	英语 ; 英语
内容类型	期刊论文
源URL	[http://ir.lib.tsinghua.edu.cn/ir/item.do?handle=123456789/147031]
专题	清华大学
推荐引用方式 GB/T 7714	Liu X,Ge J,Yang Y,et al. Feature Scale Simulation of PECVD of SiO_2 in SiH_4/N_2O Mixture[J],2016, 2016.
APA	刘璇.,葛婕.,杨轶.,宋亦旭.,任天令.,...&REN Tianling.(2016).Feature Scale Simulation of PECVD of SiO_2 in SiH_4/N_2O Mixture..
MLA	刘璇,et al."Feature Scale Simulation of PECVD of SiO_2 in SiH_4/N_2O Mixture".(2016).

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