Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases
	Xu Cheng ; Li Xiao ; Dong Hong-Cheng ; Jin Yun-Xia ; He HB(贺洪波) ; Shao JD(邵建达) ; Fan ZX(范正修)
刊名	chin. phys. lett.
	2008
卷号	25 期号:9 页码:3300
关键词	OPTICAL-PROPERTIES COATINGS MICROSTRUCTURE TEMPERATURE SI
ISSN号	0256-307x
中文摘要	ta2o5 films are deposited on fused silica substrates by conventional electron beam evaporation method. by annealing at different temperatures, ta2o5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer ( xrd) results. x-ray photoelectron spectroscopy ( xps) analysis shows that chemical composition of all the films is stoichiometry. it is found that the amorphous ta2o5 film achieves the highest laser induced damage threshold ( lidt) either at 355 or 1064 nm, followed by hexagonal phase and finally orthorhombic phase. the damage morphologies at 355 and 1064 nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. the decrease of the lidt at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.
学科主题	光学薄膜
语种	英语
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4746]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Xu Cheng,Li Xiao,Dong Hong-Cheng,et al. Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases[J]. chin. phys. lett.,2008,25(9):3300, 3303.
APA	Xu Cheng.,Li Xiao.,Dong Hong-Cheng.,Jin Yun-Xia.,贺洪波.,...&范正修.(2008).Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases.chin. phys. lett.,25(9),3300.
MLA	Xu Cheng,et al."Laser induced damage threshold at 355 and 1064 nm of Ta2O5 films of different phases".chin. phys. lett. 25.9(2008):3300.