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	Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy
	Jiang Yang ; Luo Yi ; Xi Guang-Yi ; Wang Lai ; Li Hong-Tao ; Zhao Wei ; Han Yan-Jun
	2010-10-12 ; 2010-10-12 ; OCT
关键词	residual stress surface morphology SiC substrate AlGaN intermediate layer LIGHT-EMITTING-DIODES BUFFER LAYERS TEMPERATURE Physics, Multidisciplinary
中文摘要	GaN layers with AlGaN intermediate layers of different Al mole fraction steps were grown on 6H-SiC by metal organic vapour phase epitaxy system. The residual stress and surface morphology of these samples were compared with GaN/AlN/SiC structure in detail. High resolution X-ray diffraction indicates that the c-axis constant increases with the increasing number of AlGaN steps, while low-temperature photoluminescence measurement shows a blue-shift of the GaN peak. These results should be attributed to the decreased residual stress in GaN. Furthermore, surface morphology of samples with AlGaN intermediate layers is improved according to the results of atomic force microscope.
语种	中文 ; 中文
出版者	CHINESE PHYSICAL SOC ; BEIJING ; P O BOX 603, BEIJING 100080, PEOPLES R CHINA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82832]
专题	清华大学
推荐引用方式 GB/T 7714	Jiang Yang,Luo Yi,Xi Guang-Yi,et al. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy[J],2010, 2010, OCT.
APA	Jiang Yang.,Luo Yi.,Xi Guang-Yi.,Wang Lai.,Li Hong-Tao.,...&Han Yan-Jun.(2010).Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy..
MLA	Jiang Yang,et al."Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy".(2010).

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