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	Suppression of melt convection in a proposed Bridgman crystal growth system
	Wei, J.A. ; Zheng, L.L. ; Zhang, H.
	2010-10-12 ; 2010-10-12
关键词	Theoretical or Mathematical Experimental/ cadmium compounds convection cooling crystal growth from melt gallium compounds III-V semiconductors III-VI semiconductors indium compounds IV-VI semiconductors lead compounds numerical analysis semiconductor growth solidification/ melt convection Bridgman crystal growth system numerical simulation semiconductor materials melt flow solidification compound semiconductors complicated flow pattern curved interface shape InAs InSb GaSe CdTe PbTe GaP/ A8110F Crystal growth from melt A4725Q Convection and heat transfer A6470D Solid-liquid transitions B0510 Crystal growth B2520D II-VI and III-V semiconductors B2520M Other semiconductor materials/ InAs/bin As/bin In/bin InSb/bin In/bin Sb/bin GaSe/bin Ga/bin Se/bin CdTe/bin Cd/bin Te/bin PbTe/bin Pb/bin Te/bin GaP/bin Ga/bin P/bin
中文摘要	Numerical simulations are performed for Bridgman crystal growth of several semiconductor materials, such as InAs, InSb, GaSe, CdTe, PbTe, and GaP. For materials with low Prandtl and low Grashof numbers, melt convection is weak and the traditional Bridgman technique is a suitable growth process. For the materials with high Prandtl numbers in their melt status and the growth system with high Grashof number, the temperature field and the growth interface are significantly influenced by melt flow, resulting in the complicated flow pattern and curved interface shape. A new Bridgman crystal growth system is proposed to suppress convection and improve solidification interface shape by cooling of the top melt. The results obtained from the proposed design demonstrate that melt convection may be controlled by adjusting the design parameters. Further, parametric studies are performed to determine the influence of the control parameters on melt flow and solidification interface. [All rights reserved Elsevier].
语种	英语
出版者	Elsevier Science Ltd. ; UK
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82324]
专题	清华大学
推荐引用方式 GB/T 7714	Wei, J.A.,Zheng, L.L.,Zhang, H.. Suppression of melt convection in a proposed Bridgman crystal growth system[J],2010, 2010.
APA	Wei, J.A.,Zheng, L.L.,&Zhang, H..(2010).Suppression of melt convection in a proposed Bridgman crystal growth system..
MLA	Wei, J.A.,et al."Suppression of melt convection in a proposed Bridgman crystal growth system".(2010).

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