QQ客服 官方微博 反馈留言

	Performance and reliability of multilayer silicon nanocrystal nonvolatile memory
	Wang Liudi ; Zhang Zhigang ; Zhao Yue ; Mao Ping ; Pan Liyang
	2010-10-12 ; 2010-10-12
关键词	Practical/ CMOS memory circuits elemental semiconductors integrated circuit reliability multilayers nanostructured materials random-access storage silicon/ multilayer nanocrystal nonvolatile memory NVM reliability CMOS technology triple-layer nanocrystal programming process memory window Si/ B1265D Memory circuits B2570D CMOS integrated circuits C5320G Semiconductor storage/ Si/int Si/el
中文摘要	Nonvolatile memories (NVMs) with triple layers of silicon nanocrystals were fabricated with conventional CMOS technology. This paper explores the program/erase performance and reliability of NVMs with three layers of nanocrystals. The results indicate that the nanocrystals in the triple-layer nanocrystal NVM (NCNVM) are difficult to fully charge during the programming process. The programming speed of the triple-layer NCNVMs is quicker than that of single-layer NCNVMs, which means that the second and third layers of nanocrystals in the triple-layer NCNVM affect the charge of the first layer nanocrystals. Reliability tests show that the memory window has little degradation after 1 * 10/sup 4/ cycles.
语种	英语
出版者	Tsinghua University Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/82188]
专题	清华大学
推荐引用方式 GB/T 7714	Wang Liudi,Zhang Zhigang,Zhao Yue,et al. Performance and reliability of multilayer silicon nanocrystal nonvolatile memory[J],2010, 2010.
APA	Wang Liudi,Zhang Zhigang,Zhao Yue,Mao Ping,&Pan Liyang.(2010).Performance and reliability of multilayer silicon nanocrystal nonvolatile memory..
MLA	Wang Liudi,et al."Performance and reliability of multilayer silicon nanocrystal nonvolatile memory".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。