1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较
	李大伟 ; 陶春先 ; 李笑 ; 赵元安 ; 邵建达
刊名	强激光与粒子束
	2008
卷号	20 期号:9 页码:1457
关键词	光学薄膜激光损伤电子束蒸发电子缺陷 1064 nm lasers Damage behaviors Damage thresholds Electron beam evaporation Electron beam evaporations Electronic defects Laser induced Laser induced damage Optical thin films
ISSN号	1001-4322
其他题名	Comparison of laser induced damage at 1064 nm and 532 nm to high-reflective film fabricated by electron beam evaporation
中文摘要	研究了电子束蒸发制备的HfO2／SiO2高反膜在1064nm与532nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑。当能量密度较大时出现分层剥落；二倍频激光损伤主要是由电子缺陷引起的平底坑，辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑，但电子缺陷的损伤阈值更低；随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为，辐照激光波长的变化。引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。; The damage behaviors of HfO2/SiO2 high reflective optical thin film fabricated by electron beam evaporation (EBE) illuminated using 1064 nm laser and 532 nm laser showed some difference. It was found that the damage was usually caused by absorptive defects and absorption near the interfaces under the irradiation of 1064 nm laser, and the damage was caused by electronic defects and absorptive ones under irradiation of 532 nm laser and the former had lower damage threshold. Therefore, the key point to enhance the laser resistance of optical thin films at 1064 nm was to prevent the presence of the absorptive defects, and to those at 532 nm was to eliminate the electronic defects.
学科主题	光学薄膜
分类号	O484
收录类别	EI
语种	中文
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4626]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	李大伟,陶春先,李笑,等. 1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较[J]. 强激光与粒子束,2008,20(9):1457, 1460.
APA	李大伟,陶春先,李笑,赵元安,&邵建达.(2008).1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较.强激光与粒子束,20(9),1457.
MLA	李大伟,et al."1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较".强激光与粒子束 20.9(2008):1457.