QQ客服 官方微博 反馈留言

	A process study of electron beam nano-lithography and deep etching with an ICP system
	Li QunQing ; Zhang LiHui ; Chen Mo ; Fan ShouShan
	2010-10-12 ; 2010-10-12
关键词	electron beam lithography ZEP520A resist reactive ion etching nanofabrication NANOLITHOGRAPHY SYSTEM HIGH-RESOLUTION TRENCHES ZEP-520 Engineering, Multidisciplinary Materials Science, Multidisciplinary
中文摘要	A systemic process study on an electron beam nanolithography system operating at 100 kV was present. The exposure conditions were optimized for resist ZEP520A. Grating structures with line/space of 50 nm/50 nm were obtained in a reasonably thick resist which is beneficial to the subsequent pattern transfer technique. The ICP etching process conditions was optimized. The role of etching parameters such as source power, gas pressure, and gas flow rate on the etching result was also discussed. A grating structure with line widths as small as 100 nm, duty cycles of 0.5, depth of 900 nm, and the side-wall scalloping as small as 5 nm on a silicon substrate was obtained. The silicon deep etching technique for structure sizes smaller than 100 nm is very important for the fabrication of nano-optical devices working in the visible regime.
语种	英语 ; 英语
出版者	SCIENCE PRESS ; BEIJING ; 16 DONGHUANGCHENGGEN NORTH ST, BEIJING 100717, PEOPLES R CHINA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/81353]
专题	清华大学
推荐引用方式 GB/T 7714	Li QunQing,Zhang LiHui,Chen Mo,et al. A process study of electron beam nano-lithography and deep etching with an ICP system[J],2010, 2010.
APA	Li QunQing,Zhang LiHui,Chen Mo,&Fan ShouShan.(2010).A process study of electron beam nano-lithography and deep etching with an ICP system..
MLA	Li QunQing,et al."A process study of electron beam nano-lithography and deep etching with an ICP system".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。