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	Relaxation-time limits of non-isentropic hydrodynamic models for semiconductors
	Xu, Jiang ; Yong, Wen-An
	2010-10-12 ; 2010-10-12
关键词	Relaxation-time limits Hydrodynamic model Semiconductors Critical Besov spaces EULER-POISSON MODEL DRIFT-DIFFUSION EQUATIONS SMOOTH SOLUTIONS GLOBAL EXISTENCE EXPONENTIAL STABILITY SYSTEM Mathematics
中文摘要	This work deals with non-isentropic hydrodynamic models for semiconductors with short momentum and energy relaxation-times. The high- and low-frequency decomposition methods are used to construct uniform ( global) classical solutions to Cauchy problems of a scaled hydrodynamic model in the framework of critical Besov spaces. Furthermore, it is rigorously justified that the classical solutions strongly converge to that of a drift-diffusion model, as two relaxation times both tend to zero. As a by-product, global existence of weak solutions to the drift-diffusion model is also obtained. (C) 2009 Elsevier Inc. All rights reserved.
语种	英语 ; 英语
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE ; SAN DIEGO ; 525 B ST, STE 1900, SAN DIEGO, CA 92101-4495 USA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/81182]
专题	清华大学
推荐引用方式 GB/T 7714	Xu, Jiang,Yong, Wen-An. Relaxation-time limits of non-isentropic hydrodynamic models for semiconductors[J],2010, 2010.
APA	Xu, Jiang,&Yong, Wen-An.(2010).Relaxation-time limits of non-isentropic hydrodynamic models for semiconductors..
MLA	Xu, Jiang,et al."Relaxation-time limits of non-isentropic hydrodynamic models for semiconductors".(2010).

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