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	Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases
	Xu Zhao ; Tongguang Xu ; Wenqing Yao ; Yongfa Zhu
	2010-10-12 ; 2010-10-12
关键词	Experimental/ bismuth compounds coatings conduction bands crystal structure liquid phase deposition photoconductivity thin films valence bands/ photoelectrochemical properties thin bismuth molybdates film crystal phases indium-tin oxide glass substrates heteronuclear complex dip coating film formation visible light irradiation photon current conversion valence band conduction band photocurrent temperature 400 degC to 500 degC time 1 h to 4 h Bi/sub 2/Mo/sub 3/O/sub 12/ ITO Bi/sub 2/Mo/sub 2/O/sub 9/ Bi/sub 2/MoO/sub 6// A6855 Thin film growth, structure, and epitaxy A8115L Deposition from liquid phases (melts and solutions) A7865P Optical properties of other inorganic semiconductors and insulators (thin films/low-dimensional structures) A7360H Electrical properties of insulators (thin films/low-dimensional structures) A7240 Photoconduction and photovoltaic effects photodielectric effects A8160 Corrosion, oxidation, etching, and other surface treatments A6160 Crystal structure of specific inorganic compounds/ temperature 6.7315E+02 to 7.7315E+02 K time 3.6E+03 to 1.44E+04 s/ Bi2Mo3O12/ss O12/ss Mo3/ss Bi2/ss Bi/ss Mo/ss O/ss InSnO/sur In/sur Sn/sur O/sur InSnO/ss In/ss Sn/ss O/ss Bi2Mo2O9/ss Bi2/ss Mo2/ss O9/ss Bi/ss Mo/ss O/ss Bi2Mo2O9/el Bi2/el Mo2/el O9/el Bi/el Mo/el O/el Bi2MoO6/ss Bi2/ss O6/ss Bi/ss Mo/ss O/ss Bi2MoO6/el Bi2/el O6/el Bi/el Mo/el O/el
中文摘要	Bismuth molybdate films with various phase structures including alpha -Bi/sub 2/Mo/sub 3/O/sub 12/, beta -Bi/sub 2/Mo/sub 2/O/sub 9/, gamma -Bi/sub 2/MoO/sub 6/, and gamma '-Bi/sub 2/MoO/sub 6/ are fabricated on the indium-tin oxide glass substrates from an amorphous heteronuclear complex via the dip-coating method by appropriate adjustment of the reaction conditions. alpha -Bi/sub 2/Mo/sub 3/O/sub 12/, beta -Bi/sub 2/Mo/sub 2/O/sub 9/, and gamma -Bi/sub 2/MoO/sub 6/ film can be obtained at 400 degrees C, 500 degrees C, and 500 degrees C for 1 h, respectively. At 500 degrees C, gamma '-Bi/sub 2/MoO/sub 6/ can be obtained for 4 h. Film formation process is proposed based on the experimental results. Thin gamma -Bi/sub 2/MoO/sub 6/ films exhibit high photoresponse under visible light irradiation. Incident photon to current conversion efficiency of thin gamma -Bi/sub 2/MoO/sub 6/ film starts to increase near 450 nm. And, it can reach 4.1% at 400 nm. The top of the valence band and bottom of the conduction band are roughly estimated to be -0.71 and 1.69 eV, respectively. In contrast, gamma '-Bi/sub 2/MoO/sub 6/ generated weak photocurrent; alpha -Bi/sub 2/Mo/sub 3/O/sub 12/ and beta -Bi/sub 2/Mo/sub 2/O/sub 9/ film has no photoresponse under visible light irradiation. The reason for the difference in the visible light response was discussed. [All rights reserved Elsevier].
语种	英语
出版者	Elsevier Sequoia S.A. ; Switzerland
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/81028]
专题	清华大学
推荐引用方式 GB/T 7714	Xu Zhao,Tongguang Xu,Wenqing Yao,et al. Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases[J],2010, 2010.
APA	Xu Zhao,Tongguang Xu,Wenqing Yao,&Yongfa Zhu.(2010).Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases..
MLA	Xu Zhao,et al."Synthesis and photoelectrochemical properties of thin bismuth molybdates film with various crystal phases".(2010).

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