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	Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air
	Liu Feng-Bin ; Wang Jia-Dao ; Chen Da-Rong ; Yan Da-Yun
	2010-10-12 ; 2010-10-12
关键词	hydrogen-termination oxygen-termination electronic properties diamond film PHOTOELECTRON-SPECTROSCOPY CVD DIAMOND OXIDATION VAPOR FILMS RECONSTRUCTION CONDUCTIVITY MICROSCOPY DEFECTS Physics, Multidisciplinary
中文摘要	The electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air are investigated by scanning probe microscopy (SPM). The results indicate that for the hydrogen- terminated diamond surface a shallow acceptor above the valence-band-maximum (VBM) appears in the band gap. However, the oxygen-terminated diamond film exhibits a high resistivity with a wide band gap. Based on the density-functional-theory, the densities of states, corresponding to molecular adsorbate in hydrogenated and oxygenated diamond (100) surfaces, are studied. The results show that the shallow acceptor in the band gap for the hydrogen- terminated diamond film can be attributed to the interaction between the surface C-II bonding orbitals and the adsorbate molecules, while for the oxygen-terminated diamond film, the interaction between the surface C-O bonding orbitals and the adsorbate molecules can induce occupied states in the valence-band.
语种	英语 ; 英语
出版者	IOP PUBLISHING LTD ; BRISTOL ; DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/80433]
专题	清华大学
推荐引用方式 GB/T 7714	Liu Feng-Bin,Wang Jia-Dao,Chen Da-Rong,et al. Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air[J],2010, 2010.
APA	Liu Feng-Bin,Wang Jia-Dao,Chen Da-Rong,&Yan Da-Yun.(2010).Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air..
MLA	Liu Feng-Bin,et al."Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air".(2010).

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