两种后处理方法对HfO2薄膜性能的影响

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	两种后处理方法对HfO2薄膜性能的影响; Influence of two post-treatment methods on properties of HfO₂ thin films
	尚光强 ; 王聪娟 ; 袁磊 ; 贺洪波 ; 范正修 ; 邵建达
刊名	光子学报
	2007
卷号	36 期号:9 页码:1683
关键词	氧化铪薄膜薄膜退火抗激光损伤阂值薄膜吸收
ISSN号	1004-4213
其他题名	Influence of two post-treatment methods on properties of HfO₂ thin films
中文摘要	利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜，并分别用两种后处理方法（空气中退火和氧等离子体轰击）对样品进行了处理．然后，对样品的透过率、吸收和抗激光损伤阈值进行了测试分析．实验结果表明，两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值．实验结果还表明，氧等离子体轰击的后处理效果明显优于热退火，样品的吸收平均值在氧等离子体后处理前后分别为34．8ppm和9．0ppm，而基频（1 064nm）激光损伤阈值分别为10．0J／cm^2和21．4J／cm^2．; abstract {HfO₂ thin films were prepared by electron beam evaporation technique and photoelectric maximum control method. Two kinds of post-treatment methods, both oxygen plasma bombardment and anneal in air, were employed to treated with the samples. Optical transmittance, absorption and laser induced damage threshold (LIDT) at 1064 nm were measured before and after the treatments. It is shown that post-treated with oxygen plasma is better than annealing in air to decrease the absorption and improve the LIDT of HfO₂ thin films. The absorption of HfO₂ thin film dropped from 34.8 ppm to 9 ppm and the LIDT at 1064 nm increased from 10.0 J/cm² to 21.4 J/cm², after post-treated with oxygen plasma. The difference between the two post-treated methods is studied in this article.}
学科主题	光学薄膜
分类号	TN24
收录类别	EI
语种	中文
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4578]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	尚光强,王聪娟,袁磊,等. 两种后处理方法对HfO2薄膜性能的影响, Influence of two post-treatment methods on properties of HfO₂ thin films[J]. 光子学报,2007,36(9):1683, 1686.
APA	尚光强,王聪娟,袁磊,贺洪波,范正修,&邵建达.(2007).两种后处理方法对HfO2薄膜性能的影响.光子学报,36(9),1683.
MLA	尚光强,et al."两种后处理方法对HfO2薄膜性能的影响".光子学报 36.9(2007):1683.