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	VALENCE ENERGY LEVEL STRUCTURE OF Si1-xGex/Si QUANTUM DISK
	Liu, Jin-Long ; Zhu, Jing
	2010-10-12 ; 2010-10-12
关键词	Quantum disk effective mass approximation hole DOTS SPECTRA SHAPE Physics, Applied Physics, Condensed Matter Physics, Mathematical
中文摘要	In the framework of the effective mass approximation, we develop a method to study the valence energy level structure of a Si1-xGex/Si quantum disk system in the adiabatic approximation using an exact diagonalization technique. The effects of strain, finite offset, and the difference between effective masses of holes in different materials are taken into account. The influences of both the height and the radius of the disk, and the content of Geon the valence energy level structure of the quantum disk system are discussed. Our theoretical results are useful for researching and making low-dimensional semiconductor optoelectronic devices.
语种	英语 ; 英语
出版者	WORLD SCIENTIFIC PUBL CO PTE LTD ; SINGAPORE ; 5 TOH TUCK LINK, SINGAPORE 596224, SINGAPORE
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/78483]
专题	清华大学
推荐引用方式 GB/T 7714	Liu, Jin-Long,Zhu, Jing. VALENCE ENERGY LEVEL STRUCTURE OF Si1-xGex/Si QUANTUM DISK[J],2010, 2010.
APA	Liu, Jin-Long,&Zhu, Jing.(2010).VALENCE ENERGY LEVEL STRUCTURE OF Si1-xGex/Si QUANTUM DISK..
MLA	Liu, Jin-Long,et al."VALENCE ENERGY LEVEL STRUCTURE OF Si1-xGex/Si QUANTUM DISK".(2010).

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