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Coupling scattering effect between grain boundary and point defect on the thermoelectric transport process in Co/sub 1-x/Ni/sub x/Sb/sub 3-y/Se/sub y/
Liu Wei-Shu ; Zhang Bo-Ping ; Li Jing-Feng ; Hai-Long, Z. ; Zhao Li-Dong
2010-10-12 ; 2010-10-12
关键词Theoretical or Mathematical Experimental/ antimony alloys cobalt alloys doping profiles grain boundaries grain size mechanical alloying nickel alloys plasma materials processing point defect scattering selenium alloys sintering thermal conductivity thermoelectricity/ coupling scattering effect thermoelectric transport process mechanical alloying spark plasma sintering grain boundary scattering point defect scattering enhanced power factor codoping lattice thermal conductivity room temperature fine grain size temperature 293 K to 298 K temperature 450 C Co/sub 1-x/Ni/sub x/Sb/sub 3-y/Se/sub y// A7215J Thermoelectric effects (metals/alloys) A7210F Carrier scattering by point defects, dislocations, surfaces, and other imperfections A6170N Grain and twin boundaries A6480G Microstructure A8120G Preparation of metals and alloys (compacts, pseudoalloys) A8120E Powder techniques, compaction and sintering A5275R Plasma applications in manufacturing and materials processing/ temperature 2.93E+02 to 2.98E+02 K temperature 7.2315E+02 K/ CoNiSb3Se/ss Sb3/ss Co/ss Ni/ss Sb/ss Se/ss
中文摘要Ni and Se co-doped skutterudite compounds Co/sub 1-x/Ni/sub x/Sb/sub 3-y/Se/sub y/ Se with fine grains were fabricated by combining mechanical alloying and spark plasma sintering. The coupling effect between grain boundary scattering and point defect scattering on the thermoelectric transport properties was focused.The enhanced power factor by co-doping is twice that of the sample without Ni and achieved a maximum value of 1750 mu Wm/sup -1/ K/sup -1/ at 450 degrees C for x = 0.1 . Due to the coupling scattering effect, the lattice thermal conductivity at room temperature decreased to 1.67 Wm/sup -1/ K/sup -1/, which approach the reported minimum of 1.60 Wm/sup -1/ K/sup -1/, whereas the improved ZT value reached 0.53 at 450 degrees C for the Co/sub 0.9/Ni/sub 0.1/Sb/sub 2.85/ Se/sub 0.15/. A suggested model shows that the decreased thermal conductivity is due to the coupling effect between grain boundary scattering and point defect scattering, The calculated values are in good agreement with experimental results. The simulated results also suggest that the lattice thermal conductivity could be further decreased to 0.8 Wm/sup -1/ K/sup -1/ when the grain size was reduced to 50 nm.
语种中文
出版者Chinese Physical Society ; China
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/78325]  
专题清华大学
推荐引用方式
GB/T 7714
Liu Wei-Shu,Zhang Bo-Ping,Li Jing-Feng,et al. Coupling scattering effect between grain boundary and point defect on the thermoelectric transport process in Co/sub 1-x/Ni/sub x/Sb/sub 3-y/Se/sub y/[J],2010, 2010.
APA Liu Wei-Shu,Zhang Bo-Ping,Li Jing-Feng,Hai-Long, Z.,&Zhao Li-Dong.(2010).Coupling scattering effect between grain boundary and point defect on the thermoelectric transport process in Co/sub 1-x/Ni/sub x/Sb/sub 3-y/Se/sub y/..
MLA Liu Wei-Shu,et al."Coupling scattering effect between grain boundary and point defect on the thermoelectric transport process in Co/sub 1-x/Ni/sub x/Sb/sub 3-y/Se/sub y/".(2010).
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