| SOS半导体断路开关器件研制和实验研究 | |
| 刘健 ; 张斌 ; LIU Jian ; ZHANG Bin | |
| 2010-07-19 ; 2010-07-19 | |
| 关键词 | 半导体 开关/反向恢复 关断特性 semiconductor switch/reverse recovery turn-off characteristic TM564 |
| 其他题名 | Experimental Study of Semiconductor Opening Switch Device |
| 中文摘要 | 半导体断路开关是一种新型固体开关器件,具有反向恢复电流高速关断的特性。描述了半导体断路开关器件的工作原理、制造工艺和测试方法。通过杂质扩散工艺实验,试制了不同p区扩散深度和不同基区宽度的半导体断路开关二极管,利用高能电子束辐照方法改变器件中的少子寿命。最后,对试制的不同结构器件的正向导通、反向恢复等特性进行了测试,试制样品具有较低的正向导通峰值压降和较高的反向关断速度。实验表明,通过控制基区宽度和少子寿命,可以得到反向恢复特性很好的半导体断路开关器件。; The Semiconductor Opening Switch(SOS) is a new solid switching device,and can serve a very short turn-off time during the current reverse stage.This paper describes the principle and fabrication of the SOS device,and presents the device test method.The diffusion technology is used to fabricate the SOS device with different p-well depth and different base region width,and the irradiation method is used to shorten the minority carrier lifetime.The trial product has low peak voltage drop in forward conduction and short turn-off time in current reverse stage.The characteristic test of the trial product showed that controlling the width of the base region and the lifetime of the minority carrier,the SOS devices can get good reverse recovery characteristic. |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/77003]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 刘健,张斌,LIU Jian,等. SOS半导体断路开关器件研制和实验研究[J],2010, 2010. |
| APA | 刘健,张斌,LIU Jian,&ZHANG Bin.(2010).SOS半导体断路开关器件研制和实验研究.. |
| MLA | 刘健,et al."SOS半导体断路开关器件研制和实验研究".(2010). |
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