High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation
	Zhang DW ; Fan SH ; Zhao YN ; Gao WD ; Shao JD(邵建达) ; Fan RY ; Wang YJ ; Fan ZX(范正修)
刊名	appl. surf. sci.
	2005
卷号	243 期号:1~4 页码:232
关键词	HfO2 films laser-induced damage threshold ion-assisted reaction weak absorption
ISSN号	0169-4332
中文摘要	hfo2 films were deposited by electron beam evaporation with different deposition parameters. the properties such as refractive index, weak absorption, and laser induced damage thresholds (lidts) of these films have been investigated. it was found that when pulsed nd:yag 1064 nm laser is used to investigate lidt of films: metallic character is the main factor that influences lidts of films obtained from hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter p have fewer metallic character; the ion-assisted reaction parameters are key points for preparing high lidt films and if the parameters are chose properly, high lidt films can be obtained. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光学薄膜
收录类别	EI
语种	英语
WOS记录号	WOS:000227853400033
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4440]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Zhang DW,Fan SH,Zhao YN,et al. High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation[J]. appl. surf. sci.,2005,243(1~4):232, 237.
APA	Zhang DW.,Fan SH.,Zhao YN.,Gao WD.,邵建达.,...&范正修.(2005).High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation.appl. surf. sci.,243(1~4),232.
MLA	Zhang DW,et al."High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation".appl. surf. sci. 243.1~4(2005):232.