Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films
Hong RJ(洪瑞金) ; Qi HJ(齐红基) ; Huang JB ; He GB ; Fan ZX(范正修) ; Shao JD(邵建达)
刊名thin solid films
2005
卷号473期号:1页码:58
关键词zinc oxide sputtering liminescence optical properties
ISSN号0040-6090
中文摘要the effects of oxygen partial pressure on the structure and photoluminescence (pl) of zno films were studied. the films were prepared by direct current (dc) reactive magnetron sputtering with various oxygen concentrations at room temperature. with increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase zno, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. this indicates that the emission in zno film originates from the oxygen vacancy and zinc interstitial-related defects. from optical transmittance spectra of zno films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (c) 2004 elsevier b.v. all rights reserved.
学科主题光学薄膜
收录类别EI
语种英语
WOS记录号WOS:000225749000010
公开日期2009-09-22
内容类型期刊论文
源URL[http://ir.siom.ac.cn/handle/181231/4360]  
专题上海光学精密机械研究所_光学薄膜技术研究与发展中心
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GB/T 7714
Hong RJ,Qi HJ,Huang JB,et al. Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films[J]. thin solid films,2005,473(1):58, 62.
APA 洪瑞金,齐红基,Huang JB,He GB,范正修,&邵建达.(2005).Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films.thin solid films,473(1),58.
MLA 洪瑞金,et al."Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films".thin solid films 473.1(2005):58.
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