| 镍诱导纳米晶硅薄膜的生长 | |
| 冯嘉猷 ; 何悦 ; 毕磊 ; FENG Jia-you ; HE Yue ; BI Lei | |
| 2010-06-10 ; 2010-06-10 | |
| 关键词 | 纳米晶硅 金属镍诱导 薄膜 光致发光 磁控溅射 分相 Si nanocrystal metal Ni induced thin film photoluminescence magnetron sputtering phase separation TB383.1 |
| 其他题名 | Research on nickel induced silicon nanocrystal growth |
| 中文摘要 | 采用磁控溅射方法制备了含镍过渡层的富纳米晶硅二氧化硅薄膜.对薄膜退火后的微观结构和发光性能进行了试验分析.结果表明,在高温退火后,有Ni过渡层的富纳米晶硅薄膜较没有Ni过渡层的薄膜具有更高的纳米晶硅密度和更强的室温光致发光强度.对试验结果进行热力学分析后,认为NiSi2作为纳米晶硅的形核中心诱导了薄膜的分相和纳米晶硅生长.; Silicon nanocrystal rich SiO2 thin film with nickel interlayer is deposited by magnetron sputtering.The microstructure and photoluminescence of this film is experimentally analyzed after high tempe-rature annealing.The film shows higher silicon nanocrystal density and stronger room temperature photoluminescence intensity comparing to the film without nickel.After quantitatively analyzed the experimental results with classical nucleation theory,it is concluded that the mechanism of NiSi2 induced nucleation is the origin of this phenomenon.; 国家自然科学基金资助项目(50571050) |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/61105]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 冯嘉猷,何悦,毕磊,等. 镍诱导纳米晶硅薄膜的生长[J],2010, 2010. |
| APA | 冯嘉猷,何悦,毕磊,FENG Jia-you,HE Yue,&BI Lei.(2010).镍诱导纳米晶硅薄膜的生长.. |
| MLA | 冯嘉猷,et al."镍诱导纳米晶硅薄膜的生长".(2010). |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论