| 流延法制备钛酸锶钡厚膜 | |
| 张五星 ; 薛丽红 ; 邹雪城 ; 曾祥斌 ; 尹盛 ; ZHANG Wu-xing ; XUE Li-hong ; ZHOU Xue-cheng ; ZENG Xiang-bin ; YIN Sheng | |
| 2010-06-10 ; 2010-06-10 | |
| 关键词 | 钛酸锶钡 粉末 厚膜 凹槽 流延 (Ba,Sr)TiO_3(BST) powders thick film groove tape casting TM223 |
| 其他题名 | Fabrication of BST Thick Film by Tape Casting Method |
| 中文摘要 | 采用流延法在有凹槽的硅片上制备出钛酸锶钡((Ba,Sr)TiO3)厚膜材料。为了提高薄膜的致密性和降低烧结温度,采用溶胶沉淀法制备BST纳米粉末,并结合水热处理进一步提高其结晶性,降低颗粒中有机物的吸附量。所得BST厚膜烧结温度约为1 200℃。经1 000℃、5 h热处理后,BST厚膜厚约30μm,表面平整,且较致密。介温谱表明其相变温度约为30℃,介电损耗约为0.02,与薄膜材料相比,其介温变化率有较大的提高。; BST thick films are fabricated in the grooved silicon substrate by tape casting method.Sol-precipitation method is used to obtain BST nano powders,and the crystallization of the precipitated BST powders is improved by hydrothermal treatment.The obtained BST thick film is sintered at 1 000 ℃ and 1 200 ℃ for 5 h respectively.The BST thick film sintered at 1200 ℃ have a grain size of 38 μm with damaged bottom electrode,while the BST thick film sintered at 1 000 ℃ have smooth surface,dense structure with a grain size of 0.5 μm.The finally obtained BST thick film has a thickness of about 30 μm,while the phase transition temperature is about 30 ℃ and the dialectric loss is about 0.02.The differential dielectric constant against temperature has been improved much more compared with that of BST thin films.; 国家自然科学基金资助项目(60306011) |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/60750]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 张五星,薛丽红,邹雪城,等. 流延法制备钛酸锶钡厚膜[J],2010, 2010. |
| APA | 张五星.,薛丽红.,邹雪城.,曾祥斌.,尹盛.,...&YIN Sheng.(2010).流延法制备钛酸锶钡厚膜.. |
| MLA | 张五星,et al."流延法制备钛酸锶钡厚膜".(2010). |
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