| 正/负双层光刻胶厚膜剥离技术 | |
| 林立 ; 韦书领 ; 杨春莉 ; 刘理天 ; 程绍椿 ; LIN Li ; WEI Shu-ling ; YANG Chun-li ; LIU Li-tian ; CHENG Shao-chun | |
| 2010-06-09 ; 2010-06-09 | |
| 关键词 | 光刻 正/负双层光刻胶 屋檐式边缘结构 厚膜剥离 photolithography positive/negative bi-layer resist "eaves" edge structure thick filmlift-off TN305.7 |
| 其他题名 | Positive/Negative Bi-layer Resist Technique for Thick Film Lift-off |
| 中文摘要 | 首次介绍一种正/负双层光刻胶厚膜剥离技术,采用在厚层正型光刻胶上涂薄层负型光刻胶的方法,在光刻胶的边缘形成顶层外悬的屋檐式结构,实现了10μm蒸发膜层的无高沿边缘剥离。对不同的剥离膜厚,选取合适的胶厚,可控制剥离膜的横向尺寸精度。10μm厚蒸发膜层的横向尺寸差可控制在5μm内。; A new technique of thick film lift-off with positive/negative bi-layer resist was presented first in this paper.The overhang "eaves" structure was made at the edge of resist layer by coating a thinner layer negative resist on a thicker layer positive resist to realize the lift-off of 10μm evaporated film without high edge.The horizontal size precision of the left films with different thickness can be controlled by selecting suitable thickness of resists.In this paper,the horizontal size difference of a 10μm evaporated films after lift-off can be controlled less than 5μm. |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/56905]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 林立,韦书领,杨春莉,等. 正/负双层光刻胶厚膜剥离技术[J],2010, 2010. |
| APA | 林立.,韦书领.,杨春莉.,刘理天.,程绍椿.,...&CHENG Shao-chun.(2010).正/负双层光刻胶厚膜剥离技术.. |
| MLA | 林立,et al."正/负双层光刻胶厚膜剥离技术".(2010). |
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