| 用于MEMS开关的低应力氮氧化硅桥膜 | |
| 胡光伟 ; 刘泽文 ; 张忠惠 ; 侯智昊 ; 李志坚 ; HU Guang-wei ; LIU Ze-wen ; ZHANG Zhong-hui ; HOU Zhi-hao ; LI Zhi-jian | |
| 2010-06-09 ; 2010-06-09 | |
| 关键词 | 氮氧化硅 低应力 PECVD MEMS开关 接触式开关 silicon oxynitride low stress PECVD MEMS switch contact switch TN304 |
| 其他题名 | Low-stress Silicon Oxynitride Bridge Used for MEMS Switch |
| 中文摘要 | 给出了用于微机电(MEMS)开关悬浮桥的低应力氮氧化硅(SiOxNy)薄膜的制备工艺研究结果,分析了等离子增强化学气相淀积(PECVD)制备低应力薄膜的影响因素,通过改变反应气体(SiH4,NH3和N2O)的流量比,用PECVD方法生成系列SiOxNy薄膜样品。利用形貌仪测量样品的曲率半径,计算相应的应力。研究表明,当反应气体(SiH4,NH3和N2O)的流量比为32∶12∶8(N2标定)时,可以得到张应力值为76.8 MPa的SiOxNy薄膜,其折射率为1.688,Si,N和O三种元素的成分比为56.3∶23.7∶20.0。将此薄膜生长工艺应用于开关制备,得到了适用于DC~10 GHz频段的MEMS接触式开关,其驱动电压为23.3 V。; Low-stress silicon oxynitride(SiOxNy) films used for the switches of the micro-electronic-mechanics system(MEMS) switch were prepared by plasma enhanced chemical vapor deposition(PECVD).After the impact factors of deposition of low-stress films by PECVD were analyzed,a series of SiOxNy film samples were prepared using SiH4/NH3/N2O at different gas flux ratios.The curvature radius of the samples was measured by a profiler and the stress corresponding to the films was calculated.The results show that the SiOxNy film with a low tensile stress of 76.8 MPa can be obtained when the gas flux ratio is 32∶12∶8(SiH4∶NH3∶N2O),its refractive index is 1.688,and its chemical component ratio(Si∶N∶O) is 56.3∶23.7∶20.0.When the deposition condition was used to prepare the switch,a MEMS contact switch can be obtained,which it can be applied in a frequency range of DC～10 GHz and its driving voltage is 23.3 V.; 北京市科委基金资助项目(GYYKW05070014) |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/56877]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 胡光伟,刘泽文,张忠惠,等. 用于MEMS开关的低应力氮氧化硅桥膜[J],2010, 2010. |
| APA | 胡光伟.,刘泽文.,张忠惠.,侯智昊.,李志坚.,...&LI Zhi-jian.(2010).用于MEMS开关的低应力氮氧化硅桥膜.. |
| MLA | 胡光伟,et al."用于MEMS开关的低应力氮氧化硅桥膜".(2010). |
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