| 一个带自热效应的新型LDMOS解析模型 | |
| 高雯 ; 杨东旭 ; 余志平 ; GAO Wen ; YANG Dongxu ; YU Zhiping | |
| 2010-06-09 ; 2010-06-09 | |
| 关键词 | LDMOS 自热效应 BSIM3v3 解析模型 LDMOS Self-heating effect BSIM3v3 Analytical model TN386 |
| 其他题名 | An Innovative Analytical Model for LDMOS with Self-Heating Effects |
| 中文摘要 | 介绍了一个带自热效应的新型LDMOS解析式模型。通过研究以阈值电压为基础的BSIM3v3模型,增加了对漂移区影响的考虑,同时,加入自热效应影响,且不用引入单独的自热网络,有效地提高了计算效率。模型中引入有物理背景的新参数来描述LDMOS特有的准饱和效应和自热效应。在计算实验中,模拟数据很好地吻合实际器件的测量数据,证明该模型适用于LD-MOS功率器件在电路中的仿真。; An innovative analytical model for LDMOS including self-heating effects was presented.This novel physics-based LDMOS model was developed from threshold-voltage based model,BSIM3v3.Effects of the drain-end drift region were included and self-heating effects were simulated without using separate thermal network.All new parameters of this model have physics meanings.The calculated I-V characteristics from this model are in good agreement with experimental data,which demonstrates its suitability for simulation of circuits incorporating power LDMOS devices. |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/56810]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 高雯,杨东旭,余志平,等. 一个带自热效应的新型LDMOS解析模型[J],2010, 2010. |
| APA | 高雯,杨东旭,余志平,GAO Wen,YANG Dongxu,&YU Zhiping.(2010).一个带自热效应的新型LDMOS解析模型.. |
| MLA | 高雯,et al."一个带自热效应的新型LDMOS解析模型".(2010). |
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