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	空穴型Si/SiGe共振隧穿二极管及其直流参数提取
	熊晨荣 ; 王燕 ; 陈培毅 ; 余志平 ; XIONG Chenrong ; WANG Yan ; CHEN Peiyi ; YU Zhiping
	2010-06-09 ; 2010-06-09
关键词	共振隧穿二极管 SiGe 负微分电阻 曲线拟合 resonant tunneling diodes (RTD) SiGe negative differential resistance curve fitting TN312.2
其他题名	p-well Si/SiGe-based resonant tunneling diode DC parameters
中文摘要	共振隧穿二极管因其特有的负微分电阻特性,成为一种很有前途的基于能带工程的异质结构量子器件。采用超高真空外延技术,以p型重掺杂硅为衬底生长出以4nm厚Si0.6Ge0.4层为空穴量子阱、以4nm厚Si层为空穴势垒的双势垒单量子阱结构。然后用常规半导体器件工艺制成了空穴型共振隧穿二极管。在室温下对面积为8μm×8μm的共振隧穿二极管进行测量,其峰值电流密度为45.92kA/cm2,电流峰谷比为2.21。根据测量得到的电流电压特性考虑串联电阻的影响,提取出共振隧穿二极管的直流参数。可以利用这些参数将共振隧穿二极管的直流模型加入SPICE电路模拟软件器中进行共振隧穿二极管电路设计。; The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance. A double-barrier-single-well structure with a 4 nm Si0.6Ge0.4 hole quantum well and a 4 nm Si hole barrier was grown on a p~+-Si substrate using ultra-high vacuum chemical vapor deposition technology. A p-well resonant tunneling diode was then successfully fabricated with conventional semiconductor technology. A peak current density of 45.92 kA/cm~2 and a peak to valley current ratio of 2.21 were obtained at room temperature for a 8 μm×8 μm RTD sample. The effect of the series resistance was used to extract the DC parameters for the RTD from the current-voltage relationship. The DC model of the RTD can then be incorporated into a SPICE-like simulator to simulate RTD-based circuits.; 国家"九七三"基础研究基金项目(2002CB311907); 国家自然科学基金资助项目(69836020;10075029); 国家教育振兴计划资助项目(JZ2001010)
语种	中文 ; 中文
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/56806]
专题	清华大学
推荐引用方式 GB/T 7714	熊晨荣,王燕,陈培毅,等. 空穴型Si/SiGe共振隧穿二极管及其直流参数提取[J],2010, 2010.
APA	熊晨荣.,王燕.,陈培毅.,余志平.,XIONG Chenrong.,...&YU Zhiping.(2010).空穴型Si/SiGe共振隧穿二极管及其直流参数提取..
MLA	熊晨荣,et al."空穴型Si/SiGe共振隧穿二极管及其直流参数提取".(2010).

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