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	VLSI互连线频变K参数和频变电阻的有效提取算法
	曾姗 ; 喻文健 ; 张梦生 ; 洪先龙 ; 王泽毅 ; ZENG Shah ; YU Wen-jian ; ZHANG Meng-sheng ; HONG Xian-long ; WANG Ze-yi
	2010-06-09 ; 2010-06-09
关键词	电感提取 K参数 高频 VLSI inductance extraction K element high frequency VLSI TN47
其他题名	Efficient Extraction of the Frequency-Dependent K Element and Resistance of VLSI Interconnects
中文摘要	在GHz以上高频集成电路中,必须考虑互连线的电感寄生效应,以便对电路性能进行准确的分析和验证.K参数矩阵(部分电感矩阵的逆)由于其较好的局部化特性,被广泛接受并应用于对互连电感效应进行建模.但多数已有文献未考虑高频效应或效率不高.本文提出一种新的三维频变K参数提取算法,通过与窗口技术相结合、以及窗口内线性方程组的有效求解,该算法具有较高的计算效率,同时,在此基础上,通过少量额外运算还可得出频变电阻.数值实验表明,该算法可处理复杂的互连结构,并且在保持较高准确度的情况下,其速度比电感提取软件FastHenry快几十至几百倍.; In the integrated circuits with frequency above several GHz,parasitic inductive effect has extremely influenced the circuit performance.Therefore,efficient algorithms are required to extract the frequency-dependent parameters which capture the in- ductive effect.The recently proposed K element(inverse of the partial inductance)has a good localization property,and has been widely accepted for the modeling of parasitic inductance.However,most previous works on reluctance extraction did not take high frequency effect into account and were not efficient enough for 3-D complex structure.In this paper,a set of algorithms are proposed to extract the frequency-dependent K element and resistance of 3D interconnects.With a windowing technique,a direct K extraction algorithm,and improvements on solving equations within the window,the proposed method is able to handle complex interconnect structures very efficiently.Compared with FastHenry,the presented method has a speedup ratio from several tens to several hun- dreds,while preserving good accuracy.; 国家自然科学基金(No．90407004); 清华信息科学与技术国家实验室基础研究基金
语种	中文 ; 中文
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/56133]
专题	清华大学
推荐引用方式 GB/T 7714	曾姗,喻文健,张梦生,等. VLSI互连线频变K参数和频变电阻的有效提取算法[J],2010, 2010.
APA	曾姗.,喻文健.,张梦生.,洪先龙.,王泽毅.,...&WANG Ze-yi.(2010).VLSI互连线频变K参数和频变电阻的有效提取算法..
MLA	曾姗,et al."VLSI互连线频变K参数和频变电阻的有效提取算法".(2010).

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