| GaN基发光二极管芯片光提取效率的研究 | |
| 申屠伟进 ; 胡飞 ; 韩彦军 ; 薛松 ; 罗毅 ; 钱可元 ; SHENTU Wei-jin ; HU Fei ; HAN Yan-jun ; XUE Song ; LUO Yi ; QIAN Ke-yuan | |
| 2010-06-09 ; 2010-06-09 | |
| 关键词 | GaN 发光二极管(LED) 光提取效率 蒙特卡罗方法 GaN light-emitting diodes(LEDs) light extraction efficiency Monte Carlo method TN312.8 |
| 其他题名 | Study on Light Extraction Efficiency of GaN-based Light-emitting Diode Chips |
| 中文摘要 | 基于蒙特卡罗方法模拟分析了限制GaN基发光二极管(LEDs)芯片光提取效率的主要因素。结果表明,GaN与蓝宝石之间的较大折射率差别严重限制了芯片光提取效率的提高,通过蓝宝石背面出光比通过p型GaN层的正面出光的芯片光提取效率至少高20%;同时,低GaN光吸收系数、高电极反射率以及环氧树脂封装可以有效的增加芯片光提取效率,并且LEDs芯片尺寸在400μm以下时光提取效率较高。; The factors that limit light extraction efficiency of GaN-based light-emitting diodes(LEDs) chips were investigated by using Monte Carlo method.It is shown that the large refractive index difference between GaN and Al_2O_3 seriously limits the improvement of light extraction efficiency.The extraction efficiency is enhanced at least 20% by using the structure of flip-chip bonding than that of the top-emitting.The simulation results also indicate that light extraction efficiency will increase by reducing the optical absorption in GaN,improving reflectivity of electrode and packaging the devices by epoxy.Furthermore it is shown that the optimal chip size is below 400 μm.The analysis results will play a key role in the design and fabrication of high external quantum efficiency GaN-based LEDs.; 国家重点基础研究发展规划资助项目(TG2000036601); 国家高技术研究发展计划资助项目(2001AA312190;2002AA31119Z); 国家自然科学基金资助项目(60244001) |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/54125]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 申屠伟进,胡飞,韩彦军,等. GaN基发光二极管芯片光提取效率的研究[J],2010, 2010. |
| APA | 申屠伟进.,胡飞.,韩彦军.,薛松.,罗毅.,...&QIAN Ke-yuan.(2010).GaN基发光二极管芯片光提取效率的研究.. |
| MLA | 申屠伟进,et al."GaN基发光二极管芯片光提取效率的研究".(2010). |
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