| 陶瓷基板上的集成微电感模型与制作 | |
| 王建卫 ; 蔡坚 ; 窦新玉 ; 王水弟 ; Wang Jianwei ; Cai Jian ; Dou Xinyu ; Wang Shuidi | |
| 2010-06-09 ; 2010-06-09 | |
| 关键词 | 陶瓷基板 集成微电感 Q值 薄膜集成 ceramic substrate integrated micro-inductor Q value thin film integration TM55 |
| 其他题名 | Model and Fabrication of Integrated Micro-Inductors Based on Ceramic Substrate |
| 中文摘要 | 对陶瓷基板上的集成微电感模型进行了分析。由于陶瓷基板的介电常数比Si基板低,电阻率极高,因此衬底损耗大大减小,从而有效提高了电感的Q值。同时,为了更好进行对比,研究中采用相同工艺在陶瓷基板和Si基板上同批制作了集成电感,两者的结构参数完全一致。测试结果表明,两者的电感值L基本相同,然而陶瓷基板上集成微电感Q值的峰值要比Si基板集成微电感高7左右,Si基板上Q值峰值在5 GHz以下,而陶瓷基板集成微电感的Q值峰值在10 GHz左右。; The model of integrated inductor based on ceramic substrate was analyzed.The Q values of inductors increase dramatically because of the lower dielectric constant and higher bulk conductivity of ceramic substrate,which leads to smaller substrate loss than Si substrate.At the same time,integrated inductors were fabricated on both ceramic and Si substrate for comparison.Testing results show that the L values of inductors on both substrates are more or less the same,but the peak Q value of inductors on ceramic is about 7 higher than those on Si substrate.And the maximum value of Q on ceramic substrate is at about 10 GHz,while that on Si substrate is at about 5 GHz.; 国家重大科技专项(2009ZX02038) |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/53450]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 王建卫,蔡坚,窦新玉,等. 陶瓷基板上的集成微电感模型与制作[J],2010, 2010. |
| APA | 王建卫.,蔡坚.,窦新玉.,王水弟.,Wang Jianwei.,...&Wang Shuidi.(2010).陶瓷基板上的集成微电感模型与制作.. |
| MLA | 王建卫,et al."陶瓷基板上的集成微电感模型与制作".(2010). |
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