| 计算机硬盘基片的亚纳米级抛光技术研究 | |
| 雷红 ; 雒建斌 ; 屠锡富 ; 方亮 ; Lei Hong ; Luo Jianbin ; Tu Xifu ; Fang Liang | |
| 2010-06-08 ; 2010-06-08 | |
| 关键词 | 化学机械抛光(CMP) 硬盘基片 亚纳米级粗糙度 CMP机理 Chemical-mechanical polishing (CMP) Rigid disk substrate Sub-nanometer roughness CMP mechanism TP333 |
| 其他题名 | SUB-NANOMETER PRECISIONPOLISHING OF COMPUTER RIGIDDISK SUBSTRATE |
| 中文摘要 | 随着计算机磁头与磁盘间隙的不断减小,硬盘表面要求超光滑(亚纳米级粗糙度)。化学机械抛光技术是迄今几乎唯一的全局平面化技术。研究了抛光液特性与计算机硬盘基片的化学机械抛光性能间的关系,结果表明,抛光后表面的波纹度(Wa)、粗糙度Ra)以及材料去除量强烈依赖于抛光液中磨粒的粒径、磨粒和氧化剂的浓度等因素。借助对抛光后表面的俄歇能谱(AES)分析,对其化学机械抛光机理进行了探讨。; With magnetic heads operating closer to hard disks, the hard disks are forced to be ultra-smooth. At present, chemical-mechanical polishing (CMP) has become a widely accepted global planarization technology. CMP(Chemical-mechan ical polishing) of computer rigid disk substrate in the slurry containing nano-scale SiO2 particle is studied. Results indicated that the average roughness (Ra) and the average waviness (Wa) of the polished surfaces as well as material removal amount were much dependent on the particle size and the contents of the particle and oxidant. Based on Auger electron spectrogram (AES) examinations of the chemical changes in the polished surfaces with the prepared slurry, the CMP mechanism is deduced preliminarily.; 上海市纳米专项(0352nm058) 国家自然科学基金(50390060)资助项目 |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/49236]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 雷红,雒建斌,屠锡富,等. 计算机硬盘基片的亚纳米级抛光技术研究[J],2010, 2010. |
| APA | 雷红.,雒建斌.,屠锡富.,方亮.,Lei Hong.,...&Fang Liang.(2010).计算机硬盘基片的亚纳米级抛光技术研究.. |
| MLA | 雷红,et al."计算机硬盘基片的亚纳米级抛光技术研究".(2010). |
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