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	感应耦合等离子体刻蚀机二维放电模拟
	程嘉 ; 朱煜 ; 汪劲松 ; Cheng Jia ; Zhu Yu ; Wang Jinsong
	2010-06-08 ; 2010-06-08
关键词	干法腐蚀工艺 感应耦合等离子体 电子数密度 电子温度 dry etching process inductively coupled plasma electron number density electron temperature TN405
其他题名	Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher
中文摘要	为研究感应耦合等离子体(ICP)刻蚀机腔室与线圈结构以及工艺参数对等离子体分布均匀性的影响,基于商业软件CFD-ACE+中等离子体与电磁场等模块建立了ICP刻蚀机二维放电模型.仿真研究了典型工艺条件(1.33Pa,200W,200sccm)下氩等离子体电子温度与电子数密度的空间分布,对比了不同气压与功率条件下等离子体参数在硅片表面的一维分布.结果表明,电子数密度随气压与功率的增加而升高;电子温度随气压的增加而降低,随功率增加在较小范围内先降低再升高.通过分析屏蔽板对等离子体参数的影响,发现其有助于提高等离子体密度.进而发现屏蔽板的孔隙率越大,电子温度越高,电子数密度则越低.; We investigate the effects of the configurations of the chamber and the coil of an inductively coupled plasma(ICP)etcher and the process parameters on the homogeneity of plasma distribution.Using the modules of plasma,electromagnetic field,etc.in the commercial software CFD-ACE+,a two-dimensional discharge model of an ICP etcher was built.The spatial distributions of the electron temperature Te and the electron number density ne of argon plasma were simulated at 10mTorr,200W,and 200sccm.One-dimensional distribution profiles of the plasma parameters above the wafer's surface at different pressures and powers were compared.These results demonstrate that ne increases with both pressure and power,and Te decreases with pressure,and decreases at first but then increases with power in a lesser range.A shielding slab can be used to enhance the plasma density through analyzing its effect on plasma parameters.Furthermore,the results show that Te increases but ne decreases with the porosity of the shielding slab.; 国家重点基础研究发展计划资助项目(批准号:2004CB318007)~~
语种	中文 ; 中文
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/48829]
专题	清华大学
推荐引用方式 GB/T 7714	程嘉,朱煜,汪劲松,等. 感应耦合等离子体刻蚀机二维放电模拟[J],2010, 2010.
APA	程嘉,朱煜,汪劲松,Cheng Jia,Zhu Yu,&Wang Jinsong.(2010).感应耦合等离子体刻蚀机二维放电模拟..
MLA	程嘉,et al."感应耦合等离子体刻蚀机二维放电模拟".(2010).

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