晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 激光与光电子功能材料研发中心

	晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究; Study on the growth of lattice-matched ScAlMgO₄ substrates for GaN and ZnO-based film epitaxy
	唐慧丽 ; 董永军 ; 徐军 ; 赵志伟 ; 吴锋 ; 邹军 ; 周国清
刊名	人工晶体学报
	2007
卷号	36 期号:3 页码:612
关键词	ScAlMgO4晶体衬底晶格匹配晶体生长提拉法
ISSN号	1000-985X
其他题名	Study on the growth of lattice-matched ScAlMgO₄ substrates for GaN and ZnO-based film epitaxy
中文摘要	采用提拉法成功生长了氮化镓和氧化锌基外延薄膜晶格匹配的ScAlMgO4单晶衬底材料,晶体呈透明白色,尺寸为Ф30mm×59mm,表面部分沿解理面有裂纹.粉末X射线衍射（XRD）分析表明经1400℃固相反应烧结的原料基本合成了ScAlMgO4多晶相.初步的偏光显微镜观察、晶体的粉末XRD表征、透过光谱和双晶摇摆测试表明晶体具有较好的光学性质和结晶质量.研究表明晶体本身的层状结构、较大的温度梯度和热应力的不均匀性是生长过程中引起晶体开裂的几个主要原因.; abstract {A transparent white ScAlMgO₄ crystal used as lattice-matched substrate for GaN and ZnO epitaxial film has been grown by Czochralski method. The as-grown crystal boules were about φ 30 mm × 59 mm in dimension and cracked slightly along cleavage plane. With the XRD pattern of sintered raw analysis, it is confirmed that solid-state reaction sintering at 1400° ScAlMgO₄ polycrystal phase preliminarily synthesized. Polarizing microscopy, XRD pattern, transmission spectrum and X-ray rocking curve characterization indicate the as-grown crystal is of fine crystalline and optical property. Studies show that the cracking phenomena of the ScAlMgO₄ crystals occurred during the growth process are mainly originated from its intrinsic layer structure, relatively larger temperature gradient and inhomogeneity of thermal stress.}
学科主题	光学材料;晶体
分类号	O782
收录类别	ei
语种	中文
公开日期	2009-09-24
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/6009]
专题	上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式 GB/T 7714	唐慧丽,董永军,徐军,等. 晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究, Study on the growth of lattice-matched ScAlMgO₄ substrates for GaN and ZnO-based film epitaxy[J]. 人工晶体学报,2007,36(3):612, 616.
APA	唐慧丽.,董永军.,徐军.,赵志伟.,吴锋.,...&周国清.(2007).晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究.人工晶体学报,36(3),612.
MLA	唐慧丽,et al."晶格匹配氮化镓和氧化锌基外延薄膜衬底材料ScAlMgO4晶体生长研究".人工晶体学报 36.3(2007):612.