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	MnSi_(1.7)半导体薄膜材料研究进展
	赵伟 ; 侯清润 ; 陈宜保 ; 何元金 ; Zhao Wei ; Hou Qingrun ; Chen Yibao ; He Yuanjin
	2010-05-13 ; 2010-05-13
关键词	MnSi1.7半导体薄膜 温差发电 综述 红外探测器 掺杂 纳米尺寸 MnSi1.7 semiconducting film,Thermoelectric,Review,Infrared detector,Doping,Nano-scale TN304.055
其他题名	Latest Development of MnSi_(1.7) Semiconducting Films
中文摘要	本文对近年来MnSi1.7半导体薄膜的制备方法和电学性能进行了综述。与PtSi和Bi1-xSbx薄膜制备的红外探测器相比较,用MnSi1.7半导体薄膜制备的红外探测器有诸多优点。另外,MnSi1.7半导体薄膜还可以用于制造微型温差发电器件。掺杂及制备纳米尺寸的薄膜是改善其电学性能的两个方法。通过对薄膜进行掺杂,可以获得p型和n型薄膜,薄膜的电阻率明显下降;将薄膜厚度减小到14nm后,塞贝克系数在483K时可达-967μV.K-1。; The latest progress in the growth technologies and properties characterization of the MnSi1.7 semi-conducting films was reviewed.MnSi1.7 semiconducting film could be a promising material in fabricating optical devices,including infrared detectors,miniaturized thermo-electric generators etc.Discussions focused on the technical advantages of the infrared detectors made of MnSi1.7 semi-conducting films over those of the conventional ones,such as the PtSi and Bi1-xSbx detectors.The technologies of impurity doping and of nanostructures fabrication were also discussed.The p-type and n-type MnSi1.7 films with low resistivity can be obtained by doping of different impurities.Besides,after the films thinned to 14nm,the Seebeck coefficient reaches-967μV·K-1 at a temperature of 483K.
语种	中文 ; 中文
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/31871]
专题	清华大学
推荐引用方式 GB/T 7714	赵伟,侯清润,陈宜保,等. MnSi_(1.7)半导体薄膜材料研究进展[J],2010, 2010.
APA	赵伟.,侯清润.,陈宜保.,何元金.,Zhao Wei.,...&He Yuanjin.(2010).MnSi_(1.7)半导体薄膜材料研究进展..
MLA	赵伟,et al."MnSi_(1.7)半导体薄膜材料研究进展".(2010).

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