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	Electrochemical properties of boron-doped diamond thin-film
	Liu Feng-bin ; Wang Jia-dao ; Liu Bing ; Li Xue-min ; Chen Da-rong
	2010-05-10 ; 2010-05-10
关键词	Experimental/ boron diamond doping electrochemical electrodes thin films voltammetry (chemical analysis)/ diamond thin film cyclic voltammetry electrochemical window chemical stability background current C:B/ A8245 Electrochemistry and electrophoresis A8280F Electrochemical analytical methods/ C:B/bin B/bin C/bin B/el C/el B/dop
中文摘要	By cyclic voltammetry, electrochemical properties of the boron-doped diamond thin-film electrode were investigated compared with those of Pt/BDD electrode. It shows that the boron-doped diamond thin-film electrode has wide electrochemical window (approximate 3 V), excellent chemical stability and low background current (near zero). At the same time, the result was analyzed with energy level theory. All the works show that the boron-doped diamond thin film is a kind of ideal potential electrode.
语种	中文 ; 中文
出版者	Editorial Board, J. Funct. Mater. Devices ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/24792]
专题	清华大学
推荐引用方式 GB/T 7714	Liu Feng-bin,Wang Jia-dao,Liu Bing,et al. Electrochemical properties of boron-doped diamond thin-film[J],2010, 2010.
APA	Liu Feng-bin,Wang Jia-dao,Liu Bing,Li Xue-min,&Chen Da-rong.(2010).Electrochemical properties of boron-doped diamond thin-film..
MLA	Liu Feng-bin,et al."Electrochemical properties of boron-doped diamond thin-film".(2010).

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