Processing and thickness effects on the microstructure and electrical properties of sol-gel deposited Pb(Zr, Ti)O-3 films | |
Yang, J ; Luo, JB | |
2010-05-10 ; 2010-05-10 | |
关键词 | lead zirconate titanate (PZT) films sol-gel process ferroelectric and piezoelectric properties U-type micro-actuator FERROELECTRIC THIN-FILMS PZT CERAMICS MICROELECTROMECHANICAL SYSTEMS PIEZOELECTRIC PROPERTIES DIELECTRIC-PROPERTIES PHASE COEXISTENCE TITANATE DEPENDENCE MOCVD LINE Engineering, Electrical & Electronic Instruments & Instrumentation |
中文摘要 | Conventional and modified sol-gel processes were used to deposit PZT films with different thicknesses and Zr:Ti ratio on Pt/Ti/SiO2/Si substrates. The crystalline structure and growth behavior of the films have been studied by X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy. The ferroelectric polarization-electric (P-E) hysteresis loops of the films was also measured and discussed. The structure of piezoelectric element is as (Au or Pt/Ti)/PZT/Pt/Ti multilayer film. Meanwhile, it has a relatively flat surface and each layer exhibits a very dense, uniform, sharp interface. According to the results of P-E hysteresis loops, for given PZT film, the polarization and coercive electric field increase with applied voltage increasing. Furthermore, a new piezoelectric micro-actuator including two PZT elements and a U-type stainless steel substrate for positioning a magnetic head in a high-density hard disc device has been fabricated and investigated. The micro-actuator was also tested in order to investigate the driving mechanics. The results show that the peak-to-peak head displacement of 1.146 mu m is achieved when an alternating voltage of +/- 20 V is applied on a U-type micro-actuator bonding with two 3 mu m thick PZT elements and experimental frequency response of the micro-actuator with HSA higher than 22 kHz, yielding the required servo bandwidth (13 kHz). (c) 2004 Elsevier B.V. All rights reserved. |
语种 | 英语 ; 英语 |
出版者 | ELSEVIER SCIENCE SA ; LAUSANNE ; PO BOX 564, 1001 LAUSANNE, SWITZERLAND |
内容类型 | 期刊论文 |
源URL | [http://hdl.handle.net/123456789/24484] ![]() |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | Yang, J,Luo, JB. Processing and thickness effects on the microstructure and electrical properties of sol-gel deposited Pb(Zr, Ti)O-3 films[J],2010, 2010. |
APA | Yang, J,&Luo, JB.(2010).Processing and thickness effects on the microstructure and electrical properties of sol-gel deposited Pb(Zr, Ti)O-3 films.. |
MLA | Yang, J,et al."Processing and thickness effects on the microstructure and electrical properties of sol-gel deposited Pb(Zr, Ti)O-3 films".(2010). |
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