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	Electronic structures of hydrogenated and oxygenated boron-doped diamond films
	Feng-Bin, Liu ; Jia-Dao, Wang ; Da-Rong, Chen
	2010-05-10 ; 2010-05-10
关键词	hydrogenation oxygenation boron-doped diamond film electronic structure PHOTOELECTRON-SPECTROSCOPY SURFACE CONDUCTIVITY RECONSTRUCTION WETTABILITY TEMPERATURE MICROSCOPE OXIDATION EMISSION ENERGY Physics, Multidisciplinary
中文摘要	The hydrogenated and oxygenated boron-doped diamond films have been prepared by hydrogen-plasma treatment and boiling in the strong acids, respectively. By means of the X-ray photoelectron-spectroscopy and contact angle measurements, the two surface-terminated diamond films have been evaluated. The scanning tunneling spectra have been measured by scanning probe microscope. The results indicated that for the hydrogenated diamond surface, the surface energy bands bend downwards and there exists a shallow acceptor above the valence band maximum. However, the surface energy bands for the oxygenated film bends upwards and its band gap is wide and clean. The conduction mechanisms for the two surface-terminated diamond films have been discussed.
语种	中文 ; 中文
出版者	CHINESE PHYSICAL SOC ; BEIJING ; P O BOX 603, BEIJING 100080, PEOPLES R CHINA
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/24397]
专题	清华大学
推荐引用方式 GB/T 7714	Feng-Bin, Liu,Jia-Dao, Wang,Da-Rong, Chen. Electronic structures of hydrogenated and oxygenated boron-doped diamond films[J],2010, 2010.
APA	Feng-Bin, Liu,Jia-Dao, Wang,&Da-Rong, Chen.(2010).Electronic structures of hydrogenated and oxygenated boron-doped diamond films..
MLA	Feng-Bin, Liu,et al."Electronic structures of hydrogenated and oxygenated boron-doped diamond films".(2010).

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