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	Development of X-type DEPFET macropixel detectors
	Zhang, Chen ; Lechner, Peter ; Lutz, Gerhard ; Treis, Johannes ; Woelfel, Stefan ; Strueder, Lothar ; Zhang, Shuang Nan
	2010-05-10 ; 2010-05-10
关键词	DEPFET macropixel silicon drift detector X-ray astronomy x-ray spectroscopy PROTOTYPES SILICON XEUS Instruments & Instrumentation Nuclear Science & Technology Physics, Particles & Fields Spectroscopy
中文摘要	The Depleted P-channel Field Effect Transistor (DEPFET) Macropixel detectors based on the combined detector/amplifier structure have been designed for X-ray spectroscopy applications at the Max-Planck Institute (MPI) Semiconductor Laboratory. Prototypes with several design variants have been fabricated. The outstanding performance of these devices has been previously demonstrated. In this paper, the development of an improved variant is presented, which applies the so-called X-type DEPFET originally designed for XEUS mission as the readout element of a silicon drift detector. The measured energy resolution for Mn-K-alpha line at -30 degrees C is 122 eV with a pixel size of 1 x 1 mm(2). The excellent peak/background ratio of the spectra is observed with a collimated Fe-55 source at - 30 degrees C. The integral nonlinearity is less than 0.2% up to 160keV measured with laser charge injection. Homogeneity is also studied with the laser on a computer controlled X-Y stage. (C) 2008 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/22144]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang, Chen,Lechner, Peter,Lutz, Gerhard,et al. Development of X-type DEPFET macropixel detectors[J],2010, 2010.
APA	Zhang, Chen.,Lechner, Peter.,Lutz, Gerhard.,Treis, Johannes.,Woelfel, Stefan.,...&Zhang, Shuang Nan.(2010).Development of X-type DEPFET macropixel detectors..
MLA	Zhang, Chen,et al."Development of X-type DEPFET macropixel detectors".(2010).

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