| Nickel-induced enhancement of photoluminescence from Si-rich silica films | |
| He, Y ; Ma, K ; Bi, L ; Feng, JY ; Zhang, ZJ | |
| 2010-05-10 ; 2010-05-10 | |
| 关键词 | POROUS SILICON OPTICAL-PROPERTIES ROOM-TEMPERATURE NANOCRYSTALS LUMINESCENCE EMISSION LAYERS Physics, Applied |
| 中文摘要 | The effect of Ni on the near-infrared luminescence emitting from silicon nanocrystals embedded in SiO2 matrix has been investigated. According to the thermodynamics calculation, nickel can give additional driving force to the phase separation process. The photoluminescence intensity increases with the increasing annealing temperature because of the crystallization of amorphous silicon in SiOx films. The intensity of near-infrared emission of SiO1.56/Ni/Si is stronger by a factor of 5 than that of regular specimen after annealing at 1000 or 1100 degrees C due to the increase of the density of Si nanocrystals. (c) 2006 American Institute of Physics. |
| 语种 | 英语 ; 英语 |
| 出版者 | AMER INST PHYSICS ; MELVILLE ; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/21639]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | He, Y,Ma, K,Bi, L,et al. Nickel-induced enhancement of photoluminescence from Si-rich silica films[J],2010, 2010. |
| APA | He, Y,Ma, K,Bi, L,Feng, JY,&Zhang, ZJ.(2010).Nickel-induced enhancement of photoluminescence from Si-rich silica films.. |
| MLA | He, Y,et al."Nickel-induced enhancement of photoluminescence from Si-rich silica films".(2010). |
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