QQ客服 官方微博 反馈留言

	Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films
	Bi, L ; He, Y ; Feng, JY
	2010-05-10 ; 2010-05-10
关键词	interfaces low-dimensional structures physical vapor deposition process nanomaterials semiconducting materials SILICON NANOCRYSTALS VISIBLE PHOTOLUMINESCENCE LUMINESCENCE CONFINEMENT OXIDATION Crystallography
中文摘要	In this study, Si-rich silicon oxide (SiO1.56) films are fabricated by reactive sputtering and subsequently annealed at high temperature in N-2 or Ar atmosphere. High-resolution transmission electron microscopy (HRTEM) and Raman spectrum confirms the formation of silicon nanocrystals (nc-Si). After the first step annealing process, oxygen is introduced as a post-annealing atmosphere. It has been observed that the photoluminescence properties of the films change dramatically due to the post-annealing, and the variation differs depending on the first-step annealing atmosphere. The mechanism of this phenomenon has been discussed and it has been concluded that the post-annealing mainly serves as both a passivation and an oxidation process at the nanocrystal interface. Oxygen is considered to be a more stable passivating atmosphere for SiOx films annealed in N-2 at high temperatures instead of H-2. (c) 2005 Elsevier B.V. All rights reserved.
语种	英语 ; 英语
出版者	ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/21544]
专题	清华大学
推荐引用方式 GB/T 7714	Bi, L,He, Y,Feng, JY. Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films[J],2010, 2010.
APA	Bi, L,He, Y,&Feng, JY.(2010).Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films..
MLA	Bi, L,et al."Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。