| Oxygen defect induced photoluminescence of HfO2 thin films | |
| Ni, Jie ; Zhou, Qin ; Li, Zhengcao ; Zhang, Zhengjun | |
| 2010-05-10 ; 2010-05-10 | |
| 关键词 | OPTICAL-PROPERTIES DIELECTRICS DEPOSITION Physics, Applied |
| 中文摘要 | Amorphous HfO2 films prepared by e-beam deposition exhibited room-temperature photoluminescence (PL) in the visible range, i.e., at similar to 620 and 700 rim, due to oxygen vacancies involved during deposition. This PL can be enhanced by two orders in intensity by crystallizing the amorphous films in flowing argon, where a large amount of oxygen vacancies were introduced, and can be diminished by removal of the oxygen vacancies by annealing HfO2 films in oxygen. This study could help understand the defect-property relationship and provides ways to tune the PL property of HfO2 films. (c) 2008 American Institute of Physics. |
| 语种 | 英语 ; 英语 |
| 出版者 | AMER INST PHYSICS ; MELVILLE ; CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/21495]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Ni, Jie,Zhou, Qin,Li, Zhengcao,et al. Oxygen defect induced photoluminescence of HfO2 thin films[J],2010, 2010. |
| APA | Ni, Jie,Zhou, Qin,Li, Zhengcao,&Zhang, Zhengjun.(2010).Oxygen defect induced photoluminescence of HfO2 thin films.. |
| MLA | Ni, Jie,et al."Oxygen defect induced photoluminescence of HfO2 thin films".(2010). |
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