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Thickness-dependent magnetization reversal in CoZrNb amorphous films
Li, X. W. ; Song, C. ; Yang, J. ; Zeng, F. ; Geng, K. W. ; Pan, F.
2010-05-10 ; 2010-05-10
关键词CoZrNb amorphous film magnetization reversal Barkhausen jump THIN-FILMS WIRES MEDIA ZR Materials Science, Multidisciplinary Physics, Condensed Matter
中文摘要Structure and magnetization of CoZrNb amorphous films prepared by DC magnetron sputtering have been studied as a function of film thickness (t), from 35 to 840 nm. Using comprehensive characterization, we show that the CoZrNb amorphous films possess a single phase and no nanocrystalline can be detected. The magnetic measurements indicate that the magnetization reversal of CoZrNb films is strongly dependent on t. That is, the coercivity is abruptly reduced to be lower than 4 Oe with t increasing from 35 to 105 nm, and then gradually decreases to similar to 0.2 Oe as t increases. This coercivity transition versus t is accompanied by the strong magnetization reversal when t is larger than 105 nm. The results reveal that CoZrNb amorphous films with comparatively large film thickness (> 100 nm) are suitable for sensors and anti-faked materials. (c) 2007 Elsevier B.V. All rights reserved.
语种英语 ; 英语
出版者ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/21133]  
专题清华大学
推荐引用方式
GB/T 7714
Li, X. W.,Song, C.,Yang, J.,et al. Thickness-dependent magnetization reversal in CoZrNb amorphous films[J],2010, 2010.
APA Li, X. W.,Song, C.,Yang, J.,Zeng, F.,Geng, K. W.,&Pan, F..(2010).Thickness-dependent magnetization reversal in CoZrNb amorphous films..
MLA Li, X. W.,et al."Thickness-dependent magnetization reversal in CoZrNb amorphous films".(2010).
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