| Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films | |
| Bi, L. ; Feng, J. Y. | |
| 2010-05-10 ; 2010-05-10 | |
| 关键词 | photoluminescence nanocrystal interface defects CHEMICAL-VAPOR-DEPOSITION CO-SPUTTERED FILMS VISIBLE PHOTOLUMINESCENCE OPTICAL-PROPERTIES SI NANOCRYSTALS RAMAN-SPECTRA SI/SIO2 FILMS QUANTUM DOTS LUMINESCENCE CONFINEMENT Optics |
| 中文摘要 | In this study, siliconnanocrystal-rich Al2O3 film has been prepared by co-sputtering a silicon and alumina composite target and subsequent annealing in N-2 atmosphere. The inicrostructure of the film has been characterized by infrared (IR) absorption, Raman spectra and UV-absorption spectra. Typical nanocrystal and interface defects related photoluminescence with the photon energy of 1.54 (IR band) and 1.69 eV (R band) has been observed by PL spectrum analysis. A post-annealing process in oxygen atmosphere has been carried out to clarify the emission mechanism. Despite the red shift of the spectra, enhanced emission of the 1.69eV band together with the weak emission phenomenon of the 1.54eV band has been found after the post-annealing. The R band is discussed to originate from silicon nanocrystai interface defects. The IR band is concluded to be a coupling effect between electronic and vibrational emissions. (c) 2005 Elsevier B.V. All rights reserved. |
| 语种 | 英语 ; 英语 |
| 出版者 | ELSEVIER SCIENCE BV ; AMSTERDAM ; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/21016]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Bi, L.,Feng, J. Y.. Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films[J],2010, 2010. |
| APA | Bi, L.,&Feng, J. Y..(2010).Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films.. |
| MLA | Bi, L.,et al."Nanocrystal and interface defects related photoluminescence in silicon-rich Al2O3 films".(2010). |
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