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Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires
Wang, Huatao ; Xie, Zhipeng ; Yang, Weiyou ; Fang, Jiyu ; An, Linan
2010-05-10 ; 2010-05-10
关键词SILICON-CARBIDE NANOWIRES INDIUM-PHOSPHIDE NANOWIRES FIELD-EMISSION PROPERTIES BUILDING-BLOCKS NANORODS SEMICONDUCTOR CRYSTALS NANOSTRUCTURES DIAMETER ARRAYS Chemistry, Multidisciplinary Crystallography Materials Science, Multidisciplinary
中文摘要In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.
语种英语 ; 英语
出版者AMER CHEMICAL SOC ; WASHINGTON ; 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
内容类型期刊论文
源URL[http://hdl.handle.net/123456789/20903]  
专题清华大学
推荐引用方式
GB/T 7714
Wang, Huatao,Xie, Zhipeng,Yang, Weiyou,et al. Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires[J],2010, 2010.
APA Wang, Huatao,Xie, Zhipeng,Yang, Weiyou,Fang, Jiyu,&An, Linan.(2010).Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires..
MLA Wang, Huatao,et al."Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires".(2010).
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