Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires | |
Wang, Huatao ; Xie, Zhipeng ; Yang, Weiyou ; Fang, Jiyu ; An, Linan | |
2010-05-10 ; 2010-05-10 | |
关键词 | SILICON-CARBIDE NANOWIRES INDIUM-PHOSPHIDE NANOWIRES FIELD-EMISSION PROPERTIES BUILDING-BLOCKS NANORODS SEMICONDUCTOR CRYSTALS NANOSTRUCTURES DIAMETER ARRAYS Chemistry, Multidisciplinary Crystallography Materials Science, Multidisciplinary |
中文摘要 | In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems. |
语种 | 英语 ; 英语 |
出版者 | AMER CHEMICAL SOC ; WASHINGTON ; 1155 16TH ST, NW, WASHINGTON, DC 20036 USA |
内容类型 | 期刊论文 |
源URL | [http://hdl.handle.net/123456789/20903] |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | Wang, Huatao,Xie, Zhipeng,Yang, Weiyou,et al. Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires[J],2010, 2010. |
APA | Wang, Huatao,Xie, Zhipeng,Yang, Weiyou,Fang, Jiyu,&An, Linan.(2010).Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires.. |
MLA | Wang, Huatao,et al."Morphology Control in the Vapor-Liquid-Solid Growth of SiC Nanowires".(2010). |
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