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	Enhanced room-temperature positive magnetoresistance of a-C : Fe film
	Tian, P. ; Zhang, X. ; Xue, Q. Z.
	2010-05-10 ; 2010-05-10
关键词	GIANT MAGNETORESISTANCE TRANSPORT-PROPERTIES AMORPHOUS-CARBON THIN-FILMS SEMICONDUCTORS Chemistry, Physical Materials Science, Multidisciplinary
中文摘要	Fe-doped amorphous carbon (a-C:Fe) film and pure amorphous carbon (a-C) film were synthesized on n-Si substrate using pulsed laser deposition. The a-C:Fe film has a positive magneto resistance (15% at magnetic field B = 1T) at room temperature, while it has a negative magnetoresistance below 260 K. The electrical conduction in a-C:Fe film is one order of magnitude higher than that in pure a-C film. It is found that a-C:Fe film has very different conduction mechanism from that of pure a-C film. The activation energy of electron conduction in a-C:Fe film could be tuned significantly by magnetic field. The magneto resistance effect of the a-C:Fe film seems difficult to explain by known magnetoresistance mechanisms. (c) 2007 Elsevier Ltd. All rights reserved.
语种	英语 ; 英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD ; OXFORD ; THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/20796]
专题	清华大学
推荐引用方式 GB/T 7714	Tian, P.,Zhang, X.,Xue, Q. Z.. Enhanced room-temperature positive magnetoresistance of a-C : Fe film[J],2010, 2010.
APA	Tian, P.,Zhang, X.,&Xue, Q. Z..(2010).Enhanced room-temperature positive magnetoresistance of a-C : Fe film..
MLA	Tian, P.,et al."Enhanced room-temperature positive magnetoresistance of a-C : Fe film".(2010).

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