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	4-level run-length limited optical storage on photo-chromic materials
	Heng Hu ; Longfa Pan ; Hua Hu ; Duanyi Xu
	2010-05-10 ; 2010-05-10
会议名称	Proceedings of the SPIE - The International Society for Optical Engineering ; Seventh International Symposium on Optical Storage ; Zhanjiang, China ; INSPEC
关键词	Experimental/ error statistics optical storage photochromism runlength codes/ run-length limited optical storage photochromic materials binary recording multilevel run-length limited modulation system recording density data transfer rate input laser power amplitude sigma-to-dynamic range/ A4280T Optical storage and retrieval B4120 Optical storage and retrieval B6120B Codes
中文摘要	4-Level Run-Length Limited (4L-RLL) optical storage based on photo-chromic materials is firstly investigated in this paper to our knowledge. Unlike binary recording, information in Multi-Level Run-Length Limited (ML-RLL) modulation system is carried in both the amplitude and length of the marks. ML-RLL optical storage can increase the recording density and data transfer rate with no changes to the optical/mechanical unit. For photo-chromic materials, different levels of input laser power amplitude give rise to different reflection levels. Using optimal write strategies, a 4 level linear playback signal was obtained and the sigma-to-dynamic range (SDR) of the 4-level signal was calculated. The results show that the SDR is low enough to provide low bits error rate (BER).
会议录出版者	SPIE - The International Society for Optical Engineering ; USA
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/19134]
专题	清华大学
推荐引用方式 GB/T 7714	Heng Hu,Longfa Pan,Hua Hu,et al. 4-level run-length limited optical storage on photo-chromic materials[C]. 见:Proceedings of the SPIE - The International Society for Optical Engineering, Seventh International Symposium on Optical Storage, Zhanjiang, China, INSPEC.

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