Color centers and charge state recharge in gamma-irradiated Yb : YAP

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 激光与光电子功能材料研发中心

	Color centers and charge state recharge in gamma-irradiated Yb : YAP
	Dong YJ(董永军) ; Zhou GQ(周国清) ; Xu J(徐军) ; Zhao GJ(赵广军) ; Su Fenglian ; Su LB(苏良碧) ; Li HJ(李红军) ; 司继良g ; Qian Xiaobo ; Li Xiaoqing ; Shen Jun
刊名	opt. mater.
	2006
卷号	28 期号:12 页码:1377
关键词	color center defects gamma-ray irradiation Yb : YAP
ISSN号	0925-3467
中文摘要	gamma-ray irradiation induced color centers and charge state recharge of impurity and doped ion in 10 at.% yb:yap have been studied. the change in the additional absorption (aa) spectra is mainly related to the charge exchange of the impurity fe2+, fe3+ and yb3+ ions. two impurity color center bands at 255 and 313 nm were attributed to fe3+ and fe2+ ions, respectively. the broad aa band centered at 385 nm may be associated with the cation vacancies and f-type center. the transition yb3+ -> yb2+ takes place in the process of gamma-irradiation. oxygen annealing and gamma-ray irradiation lead to an opposite effect on the absorption properties of the yb:yap crystal. in the air annealing process, the transition fe2+ -> fe3+ and yb2+ -> yb3+ take place and the color centers responsible for the 385 nm band was destroyed. (c) 2005 elsevier b.v. all rights reserved.
学科主题	光学材料;晶体
收录类别	EI
语种	英语
WOS记录号	WOS:000239904300010
公开日期	2009-09-24
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/5649]
专题	上海光学精密机械研究所_激光与光电子功能材料研发中心
推荐引用方式 GB/T 7714	Dong YJ,Zhou GQ,Xu J,et al. Color centers and charge state recharge in gamma-irradiated Yb : YAP[J]. opt. mater.,2006,28(12):1377, 1380.
APA	董永军.,周国清.,徐军.,赵广军.,Su Fenglian.,...&Shen Jun.(2006).Color centers and charge state recharge in gamma-irradiated Yb : YAP.opt. mater.,28(12),1377.
MLA	董永军,et al."Color centers and charge state recharge in gamma-irradiated Yb : YAP".opt. mater. 28.12(2006):1377.