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	Sol-gel process and properties of textured Pb(Zr, Ti)O/sub 3/ films on silicon wafers
	Wen Gong ; Xiangcheng Chu ; Jing-Feng Li ; Zhilun Gui ; Longtu Li
	2010-05-10 ; 2010-05-10
会议名称	Key Engineering Materials ; 3rd International Conference on High-Performance Ceramics (CICC-3) ; Shenzhen, China ; INSPEC
关键词	Experimental/ ferroelectric thin films ferroelectricity lead compounds piezoelectric thin films piezoelectricity scanning electron microscopy sol-gel processing texture X-ray diffraction/ sol-gel process lead zirconate titanate thin films morphotropic phase boundary silicon wafers platinum electrode control lead oxide seeding layer (001) textured PZT thin film titanium dioxide seeding layer (111) texture SEM XRD ferroelectric properties piezoelectric properties preferential orientation seeding layer Si PZT PbZrO3TiO3/ A8115L Deposition from liquid phases (melts and solutions) A6855 Thin film growth, structure, and epitaxy A7755 Dielectric thin films A7760 Piezoelectricity and electrostriction A7780 Ferroelectricity and antiferroelectricity/ Si/sur Si/el PbZrO3TiO3/int TiO3/int ZrO3/int O3/int Pb/int Ti/int Zr/int O/int PbZrO3TiO3/ss TiO3/ss ZrO3/ss O3/ss Pb/ss Ti/ss Zr/ss O/ss
中文摘要	Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.
会议录出版者	Trans Tech Publications ; Switzerland
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/18252]
专题	清华大学
推荐引用方式 GB/T 7714	Wen Gong,Xiangcheng Chu,Jing-Feng Li,et al. Sol-gel process and properties of textured Pb(Zr, Ti)O/sub 3/ films on silicon wafers[C]. 见:Key Engineering Materials, 3rd International Conference on High-Performance Ceramics (CICC-3), Shenzhen, China, INSPEC.

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