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	Uniform dome-shaped self-assembled Ge islands by UHV/CVD after boron pre-deposition
	Deng, N ; Huang, WT ; Chen, PY
	2010-05-07 ; 2010-05-07
会议名称	Group-IV Semiconductor Nanostructures ; Symposium on Group-4 Semiconductor Nanostructures held at the 2004 MRS Fall Meeting ; Boston, MA ; Web of Science ; INSPEC
关键词	Ge quantum dots UHV/CVD boron pre-deposition CHEMICAL-VAPOR-DEPOSITION QUANTUM DOTS OPTICAL-PROPERTIES GROWTH SI(100) SIZE GE/SI(001) Materials Science, Multidisciplinary Materials Science, Characterization & Testing Optics Physics, Condensed Matter
中文摘要	Effect of pre-deposited boron atoms on self-assembled growth of Ge islands on Si(100) substrate by UHV/CVD was investigated by atomic force microscopy (AFM). Proportion of dome-shaped Ge islands increases with the increasing of flux of B2H6. Quite uniform dome-shaped Ge quantum dots with size distribution of less than +/- 3%, which is narrower than the size distribution of typical bimodal self-assembled Ge dots, were obtained after appropriate boron pre-deposition. Based on the shape transition model we proposed before, the uniform size and shape distributions after boron pre-deposition were explained. The results show that boron pre-deposition can be used to fabricate uniform Ge quantum dots to meet the requirements of opto-electronic devices.
会议录出版者	MATERIALS RESEARCH SOCIETY ; WARRENDALE ; 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/16917]
专题	清华大学
推荐引用方式 GB/T 7714	Deng, N,Huang, WT,Chen, PY. Uniform dome-shaped self-assembled Ge islands by UHV/CVD after boron pre-deposition[C]. 见:Group-IV Semiconductor Nanostructures, Symposium on Group-4 Semiconductor Nanostructures held at the 2004 MRS Fall Meeting, Boston, MA, Web of Science, INSPEC.

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