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	Reproducible electro-resistance memory effect in Ag/La0.67Sr0.33MnO3 thin films
	Huang, Lina ; Qu, Bingjun ; Liu, Litian
	2010-05-07 ; 2010-05-07
会议名称	MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES ; Symposium on Materials Science and Technology for Nonvolatile Memories held at the 2008MRS Spring Meeting ; San Francisco, CA ; Web of Science
关键词	INTERFACE Materials Science, Multidisciplinary
中文摘要	The hysteretic and reproducible electro-resistance memory effect has been investigated in epitaxial La0.67Sr0.33MnO3 (LSMO) films under DC-bias stress and voltage pulses. The bias-sensitive current-voltage characteristic of the Ag/LSMO system is distinctly nonlinear, asymmetric and hysteretic, which indicates the appearance of the resistive switching. The pulsed voltage amplitude and duration dependence of the nonvolatile resistive switch were also provided. Clear resistance switching cycles were observed at room temperature under voltage pulses of +/- 5V and similar to 150ns. Reproducible switching properties, involving voltage-induced stepwise resistance change, resistance state saturation, and pulse duration dependent multilevel switchable capability, demonstrate well controllability with respect to future nonvolatile random access memory applications.
会议录出版者	MATERIALS RESEARCH SOCIETY ; WARRENDALE ; 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/16912]
专题	清华大学
推荐引用方式 GB/T 7714	Huang, Lina,Qu, Bingjun,Liu, Litian. Reproducible electro-resistance memory effect in Ag/La0.67Sr0.33MnO3 thin films[C]. 见:MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, Symposium on Materials Science and Technology for Nonvolatile Memories held at the 2008MRS Spring Meeting, San Francisco, CA, Web of Science.

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