Ge quantum-dot polysilicon emitter heterojunction phototransistors for 1.31-1.55 mu m light detection | |
Wei, Rongshan ; Deng, Ning ; Dong, Hao ; Ren, Min ; Zhang, Lei ; Chen, Peiyi ; Liu, Litian | |
2010-05-07 ; 2010-05-07 | |
会议名称 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY ; Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications held at the 2007 EMRS Spring Meeting ; Strasbourg, FRANCE ; Web of Science |
关键词 | heterujunction bipolar transistor (HBT) Ge quantum dots (QDs) polysilicon emitter photodetector GROWTH PHOTODETECTORS SI Materials Science, Multidisciplinary Physics, Condensed Matter |
中文摘要 | A Si/SiGe HBT-type phototransistor with 10 Ge-dot layers (8ML in each layer, separated by 30 nm Si spacer) incorporated in the base-collector junction was grown by UHV-CVD. To achieve low dark current density and high photo-responsivity, a high-low emitter profile consisting of a heavily doped polysilicon contact on top of a thin epitaxial emitter cap has been fabricated. At room temperature, I-V measurement showed a low dark current density of 3 x 10(-5) A/cm(2) at 3 V. The measured breakdown voltage BVceo was about 12 V. A photo-responsivity of 1.94 and 0.028 mA/W was achieved at 1.31 and 1.55 mu m for normal incidence, respectively. Compared to a p-i-n reference detector with the same quantum-dot layer, the responsivity is improved by a factor of 45 and 20 at 1.31 and 1.55 mu m, respectively. (C) 2007 Elsevier B.V. All rights reserved. |
会议录出版者 | ELSEVIER SCIENCE SA ; LAUSANNE ; PO BOX 564, 1001 LAUSANNE, SWITZERLAND |
语种 | 英语 ; 英语 |
内容类型 | 会议论文 |
源URL | [http://hdl.handle.net/123456789/16901] ![]() |
专题 | 清华大学 |
推荐引用方式 GB/T 7714 | Wei, Rongshan,Deng, Ning,Dong, Hao,et al. Ge quantum-dot polysilicon emitter heterojunction phototransistors for 1.31-1.55 mu m light detection[C]. 见:MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Symposium on Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications held at the 2007 EMRS Spring Meeting, Strasbourg, FRANCE, Web of Science. |
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