| Nitrogen-rich titanium nitride serving as Pt-Al diffusion barrier for FeRAM application | |
| Xue, Kan-Hao ; Ren, Tian-Ling ; Xie, Dan ; Jia, Ze ; Zhang, Ming-Ming ; Liu, Li-Tian | |
| 2010-05-07 ; 2010-05-07 | |
| 会议名称 | INTEGRATED FERROELECTRICS ; 19th International Symposium on Integrated Ferroelectrics ; Bordeaux, FRANCE ; Web of Science |
| 关键词 | ferroelectric memory titanium nitride diffusion barrier forming gas annealing FILMS METAL TECHNOLOGY STABILITY SYSTEM Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter |
| 中文摘要 | Nitrogen-rich titanium nitride thin films are prepared by reactive sputtering using a Ti target. Distinctively, there is only N-2 introduced in the reaction chamber. The obtained thin films show (111) and (200) peaks of titanium nitride, with a titanium to nitrogen ratio of 1:1.8. When applied into Pt-Al interface, such a nitrogen-rich titanium nitride layer has prevented the diffusion of Al into Pt during 450 degrees C forming gas annealing. The contact resistance of Al/TiNx/Pt multi-structure is low enough for integrated circuit applications. While the fabrication technique of nitrogen-rich titanium nitride is simple, it still serves as a good diffusion barrier.; Natl Sch Elect & Telecoms |
| 会议录出版者 | TAYLOR & FRANCIS LTD ; ABINGDON ; 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND |
| 语种 | 英语 ; 英语 |
| 内容类型 | 会议论文 |
| 源URL | [http://hdl.handle.net/123456789/16838]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Xue, Kan-Hao,Ren, Tian-Ling,Xie, Dan,et al. Nitrogen-rich titanium nitride serving as Pt-Al diffusion barrier for FeRAM application[C]. 见:INTEGRATED FERROELECTRICS, 19th International Symposium on Integrated Ferroelectrics, Bordeaux, FRANCE, Web of Science. |
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