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	Characterization of imprint behavior for the SrBi2Ta2O9 thin films
	Zhang, ZG ; Xie, D ; Zhu, J ; Ren, TL ; Liu, ZH
	2010-05-07 ; 2010-05-07
会议名称	INTEGRATED FERROELECTRICS ; 17th International Symposium on Integrated Ferroelectrics ; Shanghai, PEOPLES R CHINA ; Web of Science
关键词	ferroelectric imprint SBT FERROELECTRIC CAPACITORS MEMORIES Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter
中文摘要	Imprint properties of (SrBiTaO9)-Ta-2-O-2 (SBT) have been studied with various situations. The hysteresis of SBT capacitor exhibited shift as holding the remnant polarization state and this shift increases with waiting time. Hysteresis curves have a negative shift tendency at the initial stage, which comes from the different electrode interface layers. As applied a bias voltage on the capacitor with the same direction of retained polarization, the shift became more serious because of more space charges accumulated at the interfaces. However, as applied the different direction for the retained remnant polarization and bias voltages, a competition on the imprint formed in the films. The retained polarization played an important role on the imprint as the applied bias is small, and the effect of bias became stronger with increasing the applied bias voltages.
会议录出版者	TAYLOR & FRANCIS LTD ; ABINGDON ; 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/16832]
专题	清华大学
推荐引用方式 GB/T 7714	Zhang, ZG,Xie, D,Zhu, J,et al. Characterization of imprint behavior for the SrBi2Ta2O9 thin films[C]. 见:INTEGRATED FERROELECTRICS, 17th International Symposium on Integrated Ferroelectrics, Shanghai, PEOPLES R CHINA, Web of Science.

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