Aluminum nitride (AlN) thin films for MEMS devices have been successfully deposited on Si(100), Al/Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) are used to analyzed crystalline orientation and components of the films. The influence of different processing parameters of the film preferential orientation is investigated. The growth mechanism of AlN crystallites on different substrates is also discussed. These films show a excellent preferred orientation of <002> with a rocking curve FWHM of 5.6 degrees.
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