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	Effect of dielectric layer surface roughness on the isolation of an RF MEMS switch
	Lei Xiaofeng ; Liu Zewen ; Xuan Yun ; Wei Jia ; Li Zhijian ; Liu Litian
	2010-05-07 ; 2010-05-07
关键词	Practical/ aluminium electrodes gold isolation technology microswitches silicon compounds surface roughness/ dielectric layer surface roughness RF MEMS switch double-bridge capacitive switch metallic electrodes atomic force microscope radio-frequency microelectromechanical switches 13.050 nm 66.680 nm SiN-Au SiN-Al/ B2575 Micromechanical device technology B2180B Relays and switches B1350 Microwave circuits and devices/ size 1.305E-08 m size 6.668E-08 m/ SiN-Au/int SiN/int Au/int Si/int N/int SiN/bin Si/bin N/bin Au/el SiN-Al/int SiN/int Al/int Si/int N/int SiN/bin Si/bin N/bin Al/el
中文摘要	The paper presents study on the surface roughness of the dielectric layer on electrodes and its effect on the isolation of the radio-frequency microelectromechanical (RF MEMS) switches. The study is based on a double-bridge capacitive RF MEMS switch. In this switch, SiN is used as the dielectric layer with the lower electrode fabricated with gold or aluminum. The RF network measurements show that the isolation performance of the two switches is very different. The surface roughness Ra of the SiN dielectric layer on the different metallic electrodes measured with an atomic force microscope was 13.050 nm for SiN/Au and 66.680 nm for SiN/Au. The corresponding degradation factors of the off-state capacitance for the two electrodes were 0.52 and 0.15. A roughness of less than 5 nm is needed to obtain good isolation performance.
语种	中文 ; 中文
出版者	Tsinghua Univ. Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16607]
专题	清华大学
推荐引用方式 GB/T 7714	Lei Xiaofeng,Liu Zewen,Xuan Yun,et al. Effect of dielectric layer surface roughness on the isolation of an RF MEMS switch[J],2010, 2010.
APA	Lei Xiaofeng,Liu Zewen,Xuan Yun,Wei Jia,Li Zhijian,&Liu Litian.(2010).Effect of dielectric layer surface roughness on the isolation of an RF MEMS switch..
MLA	Lei Xiaofeng,et al."Effect of dielectric layer surface roughness on the isolation of an RF MEMS switch".(2010).

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